Deep-level transient spectroscopic investigations were made of electron trap defects that were introduced into n-type material, grown using the epitaxial lateral overgrowth technique, during high-energy radiation from a 90Sr source. The results indicated that the main electron irradiation-induced defect, ER3, was not a single defect level but was made up of at least 3 levels (ER3b to ER3d). One of these defects, ER3d, had activation energies and introduction rates of 0.22eV and 0.43/cm, respectively. The total introduction rate of the 3 defects (ER3b to ER3d) was approximately 1/cm.

Characterization of Electron-Irradiated n-GaN. S.A.Goodman, F.D.Auret, M.J.Legodi, B.Beaumont, P.Gibart: Applied Physics Letters, 2001, 78[24], 3815-7