The lattice-site location of Fe atoms was investigated. The 150keV Fe-ions were homogeneously implanted into films at room temperature. Two-step annealing (650C, 0.25h; 1000C, 120s) was performed in order to remove implantation-induced damage and to drive dopants into lattice sites. The structure of the films during annealing was monitored by means of Rutherford back-scattering/channelling, particle-induced X-ray emission and high-resolution X-ray diffraction techniques. The Fe+-implanted films had an expanded lattice, and the lattice distortion did not fully recover during the 2-step annealing. Angular scans which were performed in the [00•1] and [10•1] directions showed that the Fe atoms occupied Ga lattice sites in the case of low-dose implantation. In the case of high-dose implantation, some 75% of the implanted Fe atoms replaced Ga atoms; thus showing that the damage was not annealed out and that the dopants were not completely activated.

Fe Ion Implantation in GaN: Damage, Annealing and Lattice Site Location. C.Liu, E.Alves, A.D.Sequeira, N.Franco, M.F.da Silva, J.C.Soares: Journal of Applied Physics, 2001, 90[1], 81-6