A new approach, using periodically grooved substrates, was proposed for the growth of low dislocation-density GaN single crystals. Three different substrates were used: basal-plane sapphire, 6H-SiC(00•1)Si and Si(111). The surface geometry of each substrate was formed of periodic straight trenches which were oriented in the <1¯1•0>GaN or <11•0>GaN direction. The laterally grown area exhibited etch-pit densities of less than 4 x 106/cm2.

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: a New Approach for Growing Low Dislocation-Density GaN Single Crystals. T.Detchprohm, M.Yano, S.Sano, R.Nakamura, S.Mochizuki, T.Nakamura, H.Amano, I.Akasaki: Japanese Journal of Applied Physics - 2, 2001, 40[1A/B], L16-9