The structures of threading dislocations, nanopipes and inversion domains in (00•1) films, that were grown by means of metal-organic chemical vapour deposition, were reviewed. A new mechanism for the generation of misfit dislocations in epitaxial laterally overgrown GaN, and in AlGaN/GaN interfaces, was described. Cathodoluminescence studies, performed in a scanning electron microscope, showed that individual threading defects acted as non-radiative recombination centres in epitaxial laterally overgrown GaN and in InGaN quantum-wells in GaN.

The Structure and Optoelectronic Properties of Dislocations in GaN. D.Cherns: Journal of Physics - Condensed Matter, 2000, 12[49], 10205-12