Scanning Kelvin probe microscopy and non-contact atomic force microscopy were used to characterize dislocations in n-type material. The latter exhibited potential variations of 0.3 to 0.5V, with full-widths at half-maximum of 20 to 50nm. The dislocations (at densities of some 109/cm2) were found to be negatively charged.

Scanning Kelvin Probe Microscopy Characterization of Dislocations in III-Nitrides Grown by Metalorganic Chemical Vapour Deposition. G.Koley, M.G.Spencer: Applied Physics Letters, 2001, 78[19], 2873-5