Growth via the pressure-controlled solution growth method was carried out in a high-pressure furnace. It was found that the rate of increase of the N pressure affected the size and morphology of the resultant crystal. Single crystals with a good morphology were obtained at a rate of less than 49MPa/h. The resultant single crystals were such that the full-width at half-maximum of the rocking curve was about 120arcsec, with no low-angle grain boundaries, and the dislocation density was less than 105/cm2; according to transmission electron microscopic observations.

Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method. T.Inoue, Y.Seki, O.Oda, S.Kurai, Y.Yamada, T.Taguchi: Journal of Crystal Growth, 2001, 229[1], 35-40