By using the geometrical phase method, and measurements of dislocation-core distribution, a quantitative analysis was made of the contrast which was exhibited by [00•1] high-resolution transmission electron microscopic images of {11•0} prismatic stacking faults. The analysis permitted precise determinations to be made of the displacement vector and the location of any additional defects within the boundary; such as steps and dislocations. In the case of relaxed segments, a perfect match was obtained between experiment and simulated images which were based upon the Drum model. When stress fields were present there was a significant deviation, from theoretical models, of the atomic structure of the boundary. Lattice reconstruction inserted fragments of additional planes into the boundary, and dislocations were revealed.

Analysis of Strain in the {11•0} Prismatic Fault in GaN Using Digital Processing of High-Resolution Transmission Electron Microscopy Images. S.Kret, P.Ruterana, G.Nouet: Journal of Physics - Condensed Matter, 2000, 12[49], 10249-56