Layers of GaN were grown onto (00•1) sapphire by means of metal-organic chemical vapour deposition, and 3 stacking faults in the structure were analyzed. These were 2 intrinsic faults, with vectors of 1/6(20•3) and 1/3(10•0) respectively, and an extrinsic fault with a vector of 1/2[00•1]. A sequence of these 3 faults was observed near to the interface with the substrate.

HREM Study of Basal Stacking Faults in GaN Layers Grown over Sapphire Substrate. V.Potin, B.Gil, S.Charar, P.Ruterana, G.Nouet: Materials Science and Engineering B, 2001, 82[1-3], 114-6