Transmission electron microscopy and high-resolution electron microscopy were used to investigate the structural properties of GaP/In0.48(Al0.7Ga0.3)0.52P heterostructures which were grown onto GaAs(001) substrates. This lattice-matched system could be used as a defect-free substrate, because no lattice misfit existed between the InAlGaP layer and the GaAs substrate. The electron microscopic measurements indicated that there were not only misfit dislocations, but also micro-twins, at the GaP/InAlGaP hetero-interface.

Relaxation Mechanism of GaP/InGaAlP/GaAs Heterostructures. W.Zeng: Journal of Crystal Growth, 2000, 220[4], 538-42