Proposed models for the atomic structure of a 90° partial dislocation in homopolar semiconductors were compared. In particular, the traditional single-period structure and a recently proposed double-period core structure were examined. First-principles and tight-binding results for the core energies were considered, and the geometries were compared in the light of available experimental information concerning dislocations in these materials. The double-period geometry was found to be the ground-state structure for both materials.

Models of Core Reconstruction for the 90° Partial Dislocation in Semiconductors. R.W.Nunes, D.Vanderbilt: Journal of Physics - Condensed Matter, 2000, 12[49], 10021-7