Irradiation-induced impurity plus point-defect complexes were investigated in n-type crystals which were doped with Sb or O. Several majority-carrier traps and one minority-carrier trap were characterized by means of deep-level transient spectroscopy and minority-carrier transient spectroscopy. The Sb-vacancy complex (E center), E0.37, was found to anneal out in a manner which was fundamentally different to that observed in Si. That is, it was retarded under a reverse bias. The temperature-dependent carrier capture cross-sections of the E-center were an order of magnitude lower than those of the O-vacancy complex (A center), E0.27. A trap (E0.23), which was Sb-related, grew at room temperature; apparently via interstitial capture. A trap, E0.29, was attributed to the divacancy; since it was observed after proton irradiation but not after electron irradiation. A minority-carrier trap, H0.30, which exhibited a marked Poole-Frenkel effect, was Sb-related and was suggested to be linked to the E center.

Irradiation-Induced Defects in Ge Studied by Transient Spectroscopies. J.Fage-Pedersen, A.Nylandsted Larsen, A.Mesli: Physical Review B, 2000, 62[15], 10116-25