Implantation-induced damage in this material consisted of point defects in the form of Hg interstitials which gave rise to n-type conductivity. The sequence of implantation energies which was used in multiple-energy ion-implantation schemes was found to have a marked effect upon the defect profile. Ion implantation using ascending energies was found to produce an n+ profile, together with a long n-layer tail. In the present case, implantation was restricted to 50 or 130keV, and doses of 5 x 1013 or 1013/cm2, respectively. Radiation-enhanced diffusion was suggested to be responsible for an extended n-layer.

Boron Ion Implantation in Hg0.78Cd0.22Te. M.B.Dutt, R.Nath, R.Kumar: Proceedings of the SPIE, 2000, 3975, 68-71