A kinetic model was developed for the activation of group-V impurities as acceptors. The model assumed that Hg interstitials were introduced, at the surface, and diffused into the alloy. They there displaced group-V impurities which resided on the metal sub-lattice, and placed them on the Te sub-lattice; thus generating Te interstitials. These Te interstitials then diffused back to the top surface, or to climbing dislocations. The rate-controlling process was the out-diffusion of Te interstitials. An important result was that the conversion rate was inversely proportional to the impurity concentration. The model was found to be in good agreement with published data on the activation of As.

Kinetics of Activation of Group-V Impurities in HgCdTe Alloys. H.F.Schaake: Journal of Applied Physics, 2000, 88[4], 1765-70