Ion channelling was used to characterize InAs quantum dots which had been grown on GaAs(100) by means of molecular beam epitaxy. Lattice deformation of the quantum dots, and diffusion of Ga atoms into the dots, were observed to depend strongly upon the InAs coverage. It was shown that this diffusion was significantly enhanced when the InAs coverage was changed from 1.53 to 1.71 monolayers. During this change, the lattice deformation was reduced while the average size (base diameter) of the dots decreased. These results suggested that some change in growth process occurred.

Lattice Deformation and Interdiffusion of InAs Quantum Dots on GaAs(100). N.Matsumura, T.Haga, S.Muto, Y.Nakata, N.Yokoyama: Journal of Applied Physics, 2001, 89[1], 160-4