The sizes and shapes of self-assembled InAs quantum-dots, as affected by a 2-monolayer InAs seed layer, were investigated for 2.0-, 2.5- and 2.9-monolayer deposition onto a GaAs(100) substrate. A bimodal size distribution of InAs islands, at a 2.5-monolayer InAs coverage, and the formation of larger InAs quantum-dots for 2.9-monolayer deposition, were observed on the second InAs layer. Cross-sectional transmission electron microscopic measurements indicated that larger InAs quantum-dots, for 2.9-monolayer deposition on the second layer, were free of dislocations.

Size and Shape Evolution of Self-Assembled Coherent InAs/GaAs Quantum Dots Influenced by Seed Layer. H.Y.Liu, B.Xu, D.Ding, Y.H.Chen, J.F.Zhang, J.Wu, Z.G.Wang: Journal of Crystal Growth, 2001, 227-228, 1005-9