A phenomenological theory of growth during semiconductor hetero-epitaxy was developed which included the effects of the formation of Stranski-Krastanov islands and misfit dislocations. The theory could reproduce the various types of growth behavior which were observed during hetero-epitaxial growth. A procedure that included atomistic calculations was also formulated for determining the phenomenological parameters. The critical thickness of InAs on GaAs(110), as obtained using this procedure, was in good agreement with the experimentally observed value.

Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit Dislocations. K.Okajima, K.Takeda, N.Oyama, E.Ohta, K.Shiraishi, T.Ohno: Japanese Journal of Applied Physics - 2, 2000, 39[9A/B], L917-20