Carrier profiles for InAs films grown on GaP were modelled by using a first-order approximation which assumed that 90° edge dislocation intersections, and threading dislocation intersections, acted as shallow donors. Due to dislocation annihilation during growth, the threading-dislocation intersection-density decreased according to Dx = D0x0/(x0 +x), where x was the distance from the InAs/GaP interface, D0 was the dislocation density at the InAs/GaP interface and x0 was the first annihilation position from the interface. The carrier profiles in InAs films could be described by a similar equation which was deduced from the threading dislocation intersection profile. The calculated carrier profiles agreed well with measured profiles. This supported the hypothesis that both edge dislocation intersections and threading dislocation intersections acted as shallow donor sources.

Correlation of Defect Profiles with Carrier Profiles of InAs Epilayers on GaP. H.Tsukamoto, E.H.Chen, J.M.Woodall, V.Gopal: Applied Physics Letters, 2001, 78[7], 952-4