A systematic study was made of Be diffusion from a Be-doped (3 x 1019/cm3) In0.53Ga0.47As epilayer which was sandwiched between undoped InP epilayers. By considering segregation phenomena at the InGaAs/InP interfaces, and taking account of built-in electric field, Fermi-level and bulk self-interstitial generation/annihilation effects, the concentration profile of Be in the heterostructure was simulated on the basis of 2 kick-out models. A comparison with experimental data showed that the first model, which involved neutral Be interstitials in InGaAs and singly positively charged Be interstitials in InP, furnished a better description than did the second one, which assumed the involvement of neutral Be interstitials in InGaAs and InP.

Comparative Models for Diffusion of Be in InGaAs/InP Heterostructures. S.Koumetz, K.Ketata, M.Ihaddadene, P.Martin, M.Ketata, C.Dubois: Journal of Physics - Condensed Matter, 2001, 13[22], L483-6