A study was made of Be diffusion from a Be-doped (3 x 1019/cm3) In0.53Ga0.47As layer which was sandwiched between undoped InP layers that had been grown by means of gas-source molecular beam epitaxy. In order to explain the experimental depth profiles a kick-out model was proposed, for substitutional interstitial diffusion mechanism, which involved neutral Be interstitials in the InGaAs epilayer and singly positively charged Be interstitials in the InP epilayers. By applying boundary conditions at the heterojunctions, and taking account of electric field, Fermi level and bulk self-interstitial generation/annihilation effects, good agreement was obtained between the simulated and experimental data.

A Model for the Diffusion of Beryllium in InGaAs/InP Heterostructures. M.Ihaddadene, S.Koumetz, O.Latry, K.Ketata, M.Ketata, C.Dubois: Materials Science and Engineering B, 2001, 80[1-3], 73-6