The diffusion of Zn into InGaAsP layers was studied by using a metal-organic vapour phase epitaxy-based diffusion process, with H and N being alternately used as the carrier gas, in order to compare their effect upon the diffusion behaviour. When using N, larger Zn diffusion coefficients were obtained under given conditions.

Comparison of MOVPE-Based Zn Diffusion into InGaAsP/InP Using H2 and N2 Carrier Gas. H.Schroeter-Janssen, H.Roehle, D.Franke, R.Bochnia, P.Harde, N.Grote: Journal of Crystal Growth, 2000, 221, 70-4