Cracks in a 2% tensile-strained In0.72Ga0.28P film, grown onto an InP substrate by means of molecular-beam epitaxy, were studied by using cross-sectional transmission electron microscopy and scanning probe microscopy. A dislocation analogue (replacing the crack by an array of equivalent infinitesimal edge dislocations) was used to account for the ratio of crack-opening displacement, to normal surface displacement, which was associated with the crack.

The Surface Topography of Cracks in Strained InGaP Films. X.Wu, G.C.Weatherly: Philosophical Magazine Letters, 2000, 80[8], 535-41