The thermal stability of 3He which had been implanted into monocrystalline material was studied as a function of post-implantation annealing temperatures of 150 to 600C and annealing temperature ramp-rates ranging from 0.1 to 20C/s. The retention of 1MeV He, implanted to a fluence of 1016/cm2, was measured using the 3He(d,p)4He nuclear reaction. It was shown that He was an easy diffuser, unless trapped by implantation-produced defects. The temperature ramp-rate was shown to be the predominant parameter which determined the fraction of implanted He that became trapped in voids.

Annealing Behaviour of Implanted Helium in Indium Phosphide. T.W.Simpson, I.V.Mitchell: Applied Physics Letters, 2001, 78[2], 207-9