Implantation-induced clusters of B plus Si self-interstitials, and their effects upon the transient enhanced diffusion of B, were investigated in samples which had been pre-doped with B to various concentrations. Excess Si interstitials were introduced by 60keV Si+ implantation to doses of 1014 or 5 x 1014/cm2. The B diffusivity, and the amount of B trapped in clusters, were deduced from best fits to simulated profiles after annealing at 740 or 800C. The results showed that the B interstitial clusters initially acted as sinks for interstitials; thus strongly reducing transient enhanced diffusion in the early stages of annealing. However, being more stable than Si interstitial clusters and {113} defects, they dissolved slowly and could maintain a moderate Si interstitial supersaturation for longer annealing times; even when the Si-interstitial defects were completely dissolved. The results showed that the amount of B in the B interstitial clusters was higher than that of interstitials. The average ratio of the B to interstitial concentration was estimated to be about 1.5.

Boron-Interstitial Silicon Clusters and their Effects on Transient Enhanced Diffusion of Boron in Silicon. S.Solmi, M.Bersani, M.Sbetti, J.Lundsgaard Hansen, A.Nylandsted Larsen: Journal of Applied Physics, 2000, 88[8], 4547-52