The ultra-fast diffusion of Cu and Ti atoms in a p+-type channel was observed in samples which were stressed using a high current density. The junction changed under a high current stress, and copper silicide formed there. The effects of a high current upon silicide line formation, and symmetrical end-of-range defect elimination near to the center of the p+-type channel, were considered.

Electromigration of Cu and Ti Atoms and Dopant Junction Profiles in a p+-Si Implanted Channel under High-Density Current. H.H.Lin, S.L.Cheng, L.J.Chen: Materials Science in Semiconductor Processing, 2001, 4[1-3], 245-7