The diffusion of O was modelled in terms of the diffusion of dissolved SiO. The latter molecule was located in the largest space in the diamond lattice, and was oriented in a (111) direction; with the O lightly bonded to a network Si atom. This configuration was consistent with infra-red spectra, with the dichroism of infra-red spectral lines and the internal friction of O. An anomalous rapid diffusion of O below 700C was suggested to result from the diffusion of molecular water or O in silicon. The diffusion and exchange of Si tracer in SiO was suggested to explain the tracer diffusion of Si in Si.

Diffusion of Oxygen and Silicon in Silicon: Silicon Monoxide Model. R.H.Doremus: Journal of Materials Research, 2001, 16[1], 185-91