The transient behavior of P diffusion was investigated in samples which were implanted with As or Ge to above the amorphization threshold. Annealing at 720C, after Ge implantation, produced extensive P segregation in the extended defect layer that was created by implantation damage. This segregation was attributed to P-trapping to end-of-range {311} defects and dislocation loops. In the case of As implantation, P segregation was observed after only 60s annealing. In the case of As-implanted samples, significant P depletion occurred in the As tail-region after further annealing. A non-equilibrium simulation, that took account of both Fermi-level and electric-field effects, predicted P depletion during transient enhanced diffusion. Simulation results which were based upon the coexistence of neutral and positively charged P-interstitial pairs agreed well with the experimental results.

Anomalous Phosphorus Diffusion in Si during Post-Implantation Annealing. R.Kim, Y.Furuta, S.Hayashi, T.Hirose, T.Shano, H.Tsuji, K.Taniguchi: Applied Physics Letters, 2001, 78[24], 3818-20