An external electric field of up to 106V/cm was used for in situ nanoscale p-n junction fabrication, in Li-doped material, in a scanning probe microscope. The creation of nano p-n junctions was attributed to the thermally assisted electromigration of Li+ ions.

Nanoscale p-n Junction Fabrication in Silicon due to Controlled Dopant Electromigration. L.Chernyak, M.Klimov: Applied Physics Letters, 2001, 78[11], 1613-5