The movement of edge dislocations, and the related acoustic emission of (111) samples carrying a direct-current density of 5 x 104 to 5 x 105A/m2 in the [110] direction, were studied at 30 to 450K. It was shown that the basic mechanism of dislocation movement was the electric wind, which determined the magnitude of the effective charge per atom of the dislocation line; with a Zeff-value of 0.06 for n-type Si and of -0.01 for p-type Si. By matching theory to experimental data, it was possible to determine the contribution of edge dislocations to the acoustic-emission response of sample. The characteristic transition frequencies of dislocations in n-type and p-type Si, from one metastable state to another, were found to range from 0.1 to 0.5Hz. The diffusivity of atoms in the dislocation impurity atmosphere was estimated to be 3.2 x 10-18m2/s for n-type Si and 1.5 x 10-18m2/s for p-type material.

Electrically Stimulated Movement of Edge Dislocations in Silicon in the Temperature Range of 300-450K. A.A.Skvortsov, A.M.Orlov, V.A.Frolov, A.A.Solovev: Fizika Tverdogo Tela, 2000, 42[11], 1998-2003 (Physics of the Solid State, 2000, 42[11], 2054-60)