The anomalous degradation of n+-p-p+ solar cells, when irradiated with high-energy protons or electrons, was considered. Several models were proposed which assumed that radiation-induced defects were responsible for the degradation. The effects of radiation-induced deep defects with energy levels at Ec-0.17, Ec-0.1, Ec-0.43 and Ev+0.36eV were studied. It was shown that, among these defects, only a defect with an energy level at Ec-0.1eV caused anomalous degradation.

Effect of Radiation-Induced Defects on Silicon Solar Cells. S.Z.Karazhanov: Journal of Applied Physics, 2000, 88[7], 3941-7