Various extended defects which were produced on {113} and {111} habit planes, by in situ electron irradiation in a high-resolution electron microprobe at room temperature, were studied. It was observed that interstitials and vacancies tended to aggregate in the shape of <110>-oriented chain-like defects on {113}; in addition to well-known rod-like defects of interstitial type. The defects were characterized by a differing magnitude, and opposite sign of lattice relaxation, which was introduced into the surroundings. It was found that <110>-oriented interstitial chains were also formed by the agglomeration of interstitials to the cores of vacancy or interstitial Frank partial dislocations, and permitted the relaxation of strongly deformed crystal regions.

In situ HREM Irradiation Study of Intrinsic Point Defect Clustering in FZ-Si. L.Fedina, A.Gutakovskii, A.Aseev: Crystal Research and Technology, 2000, 35[6-7], 775-86