The formation of A-centres and divacancies in p+-n-n+ structures was investigated after 4MeV electron irradiation at intensities ranging from 1011 to 5 x 1012/cm2s. It was shown that the introduction rates of A-centres and divacancies increased with intensity in the above range, and then saturated at intensities above 1012/cm2s. By using published data, the introduction rates of these defects were considered for electron irradiation intensities of 1011 to 1015/cm2s. This indicated a consistent role for C interstitial atoms, and the electron-enhanced migration of Si self-interstitials, in the observed behaviour of introduction rates.

Formation of Radiation Defects in Silicon Structures under Low-Intensity Electron Irradiation. S.Makhkamov, N.A.Tursunov, M.Ashurov, R.P.Saidov, Z.M.Khakimov: Semiconductor Science and Technology, 2001, 16[7], 543-7