A study was made of the properties of the complexes, which were responsible for optical absorption peaks at about 1870 and 2072/cm, that were created by the room-temperature electron irradiation of hydrogenated material. The specimens were n-type, p-type or high-purity crystals. They were doped with H and/or D, by annealing in the given gas at 1300C, followed by quenching. They were then irradiated with 3MV electrons at room temperature. The optical-absorption spectra were measured by means of Fourier-transform infra-red spectrometry at about 7K. The 1870/cm peak was weak in B-doped specimens, and strong in high-purity and P-doped specimens. On the other hand, the 2072/cm peak was weak in P-doped specimens and strong in high-purity and B-doped specimens. The results supported the hypothesis that the 1870 and 2072/cm peaks were due to complexes which included self-interstitials and H, or vacancies and H, respectively. The intensities of the 1870 and 2072/cm peaks were proportional to the square of the electron dose at low doses. This indicated that they were due to I2H2 and V2H2, respectively. During isochronal annealing, the 1870 and 2072/cm peaks disappeared below 200 and 300C, respectively.

Formation of Defect Complexes by Electron-Irradiation of Hydrogenated Crystalline Silicon. M.Suezawa: Physical Review B, 2001, 63[3], 035201 (7pp)