An optical absorption study was made of the vacancies and self-interstitials which were created by the room-temperature electron irradiation of hydrogenated material. The formation of H2*, a metastable state of H2, was also studied. The specimens were n-type, p-type or high-purity crystals. They were doped by annealing in H at 1300C, followed by quenching. They were then irradiated with 3MV electrons at room temperature. The optical absorption spectra were measured by means of Fourier-transform infra-red spectrometry at about 7K. Many optical absorption peaks were observed. The 1987 and 1990/cm peaks were weak in B-doped specimens, and the 2122/cm peak was weak in P-doped specimens. The results supported the hypothesis that the 1987 and 1990/cm peaks, and the 2122/cm peak, were due to complexes which included I and V, respectively. The H2* concentration did not exhibit a good correlation with the concentrations of V or I. It was suggested that H2* was formed by the interaction of H2 and a Frenkel pair.

Hydrogen-Related Complexes Formed by Electron Irradiation of Hydrogenated Silicon.· M.Suezawa: Physical Review B, 2001, 63[3], 035203 (6pp)