The impact of 100eV Si atoms on an amorphous specimen was simulated by using molecular dynamics techniques. The sample was subjected to an homogeneous strain which resulted in a tensile or compressive stress. In both cases, it was found that the stress was relieved by ion bombardment. In a compressed specimen, stress relief was accompanied by the surplus production of over-coordinated Si atoms and an outward flow of surface atoms. In the case of a tensile stress, rather more under-coordinated Si atoms were produced and the surface bulged inwards.

Stress Relaxation in a-Si Induced by Ion Bombardment. M.Koster, H.M.Urbassek: Physical Review B, 2000, 62[16], 11219-24