The effects of annealing temperature and time upon the formation of threading dislocations were investigated after high-energy B implantation. The 1MeV B+ ions were implanted into <100> wafers, to a dose of 1014/cm2. The wafers were then annealed in a rapid thermal annealing furnace or conventional furnace, for times of between 1s and 1h, at between 700 and 1150C. Following annealing, the wafers were subjected to a standard metal-oxide semiconductor process. Following processing, the threading dislocation density and projected range dislocation density were studied by using etch pit density counts and transmission electron microscopy. The results showed that annealing (rapid thermal or furnace) at temperatures above 1000C reduced the high density of threading dislocations by 1 to 2 orders of magnitude. Quantitative plan-view transmission electron microscopic studies showed that the mechanism of defect reduction was different during rapid thermal annealing and furnace annealing, and was perhaps ramp-rate dependent.

Effect of Annealing Time and Temperature on the Formation of Threading and Projected Range Dislocations in 1MeV Boron Implanted Si. K.S.Jones, C.Jasper, A.Hoover: Applied Physics Letters, 2001, 78[12], 1664-6