It was recalled that secondary defects which were produced by ion implantation after annealing had previously been shown to depend upon the implantation and annealing conditions. However, for doses which were well below the amorphization dose, the defects were predominantly interstitial in nature. The effect of implantation temperature upon secondary defects was studied here. Implantation with 1MeV Sn to a dose of 3 x 1013/cm2, and subsequent annealing, was carried out. The variation in the defect microstructure with implantation temperature included the preferential formation of small interstitial loops at -191C, and rod-like defects alone when similar implantation was carried out at 300C. It was concluded that these microstructures were the result of dense cascades which were created by heavy Sn ions. These created local amorphous pockets in the implantation-damage region at the lowest temperatures. Variations in the microstructure with implantation temperature were explained in terms of the effect of dynamic annealing.

Effect of Implant Temperature on Secondary Defects Created by MeV Sn Implantation in Silicon. J.Wong-Leung, C.Jagadish, M.J.Conway, J.D.FitzGerald: Journal of Applied Physics, 2001, 89[5], 2556-9