The annealing of ion-implanted material led to the formation of various extrinsic defects which affected dopant diffusion. Mechanisms were described here via which small clusters evolved into {113} defects, then transformed into dislocation loops of faulted or perfect type during annealing. The former were the only ones to survive long annealing times. The approach assumed that these defects exchanged Si interstitial atoms during annealing, and that a reduction in formation energy of the defects (due to a size increase or change in structural characteristics) was the driving force for thermal evolution. Because the supersaturation of Si interstitial atoms in dynamic equilibrium with these defects was an exponential function of the formation energies, a realistic description could be obtained for the time-evolution of this supersaturation in the defect region, and in the whole wafer, responsible for transient-enhanced B diffusion.

Thermal Evolution of Extended Defects in Implanted Si: Impact on Dopant Diffusion. A.Claverie, B.Colombeau, G.B.Assayag, C.Bonafos, F.Cristiano, M.Omri, B.De Mauduit: Materials Science in Semiconductor Processing, 2000, 3[4], 269-77