Extended defects which were created by ion implantation (Si, Ge or Sn), to doses below the amorphization threshold, were studied after annealing (800C, 0.25h). It was found that the mass of the implanted ion affected the type of defect which was observed. Rod-like {311} planar defects were observed for all of types of implanted ion. Small {111} interstitial faulted dislocation loops were also observed in Ge-implanted and Sn-implanted samples.

Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge and Sn Implantation in Silicon. J.Wong-Leung, S.Fatima, C.Jagadish, J.D.FitzGerald, C.T.Chou, J.Zou, D.J.H.Cockayne: Journal of Applied Physics, 2000, 88[3], 1312-8