A study was made of thermal donor formation due to 13.6MeV B ion, 16MeV N ion or 245 to 305MeV Kr ion bombardment, and annealing at 380 to 500C. It was found that carrier concentration profiles which were associated with thermal donors extended to a depth that was equal to the projected range, and had a maximum in the near-surface region. The spatial separation of vacancy and interstitial defects, and the preferential accumulation of vacancy-type defects near to the surface, were considered to be the main reason for this effect.

Thermal Donor Formation in Crystalline Silicon Irradiated with High-Energy Ions. E.P.Neustroev, I.V.Antonova, V.P.Popov, V.F.Stas, V.A.Skuratov, A.Y.Didyk: Nuclear Instruments & Methods in Physics Research B, 2000, 171[4], 443-7