Vacancy-type defects were studied, after high-energy self-implantation and rapid thermal annealing, by using depth-resolved enhanced positron-beam techniques. Two different types of open-volume defect were found at the projected range, and at half of the projected range. The defect found at the latter location was an agglomeration of point defects which contained vacancies. This defect gettered diffusing Cu atoms. The vacancy-type defect which was observed at the projected range was thought to be related to the interstitial loops which formed there. The positron annihilation parameters suggested that this defect was not decorated by diffusion Cu atoms.

Impurity Gettering by Vacancy-Type Defects in High-Energy Ion-Implanted Silicon at Rp/2. R.Krause-Rehberg, F.Börner, F.Redmann: Applied Physics Letters, 2000, 77[24], 3932-4