The characteristics of an ion implantation-induced defect in a Si substrate were investigated. This defect was considered to be a complex which involved a point defect and a substrate dopant atom. The investigation focussed upon the dependence of the substrate dopant species (P or B) on defect formation. The characteristics of the defect were investigated by measuring the bulk generation lifetime of metal oxide semiconductor capacitors, into which Si+ had been implanted so as to form dopant-related defects in the substrate (damaging implantation). It was found that the generation lifetime of the B-doped substrate was one or two orders of magnitude smaller than that of a P-doped substrate; for a given dopant concentration under the same implantation conditions. The temperature dependence of the generation lifetime showed that the energy level of the defect was located at the intrinsic Fermi level; regardless of the substrate dopant species and the concentration. By measuring the dependence of the generation lifetime upon the temperature of post-damaging implantation annealing, it was shown that the defects vanished at about 800C for both types of substrate. It was also found that the number of dopant-related defects depended upon the implanted ion species. For instance, BF2+ implantation produced more defects than did As+ implantation.

Dependence of Ion Implantation: Induced Defects on Substrate Doping. K.Kanemoto, F.Imaizumi, T.Hamada, Y.Tamai, A.Nakada, T.Ohmi: Journal of Applied Physics, 2001, 89[6], 3156-61