Infra-red studies were made of defects in Czochralski-grown material which was subjected to fast-neutron bombardment and subsequent annealing. Attention was focussed mainly on the investigation of the VO4 defect, which was considered to be related to a pair of bands (1032 and 1043/cm) in neutron-irradiated material and to another pair of bands (983 and 1004/cm) in O-implanted material. Semi-empirical calculations of the localized vibrational mode frequencies of the VO4 structure supported its proposed relationship to the second pair of bands. This correlation was consistent with the observation that the zero-point energy of each VOn defect (n = 1, 2, 3 or 4) was lower than the zero-point energy of the constituent defects. That is, the general relationship was: EVO(n) < EVO(n-1) + EO(i).

Investigation of Two Infrared Bands at 1032 and 1043/cm in Neutron Irradiated Silicon. C.A.Londos, L.G.Fytros: Journal of Applied Physics, 2001, 89[2], 928-32