The effect of crystal-type and neutron fluence upon the formation of H-defect shallow donors in irradiated float-zone material, grown in a H atmosphere, was studied. The annealing behaviours of neutron-irradiated float-zone material which had been grown in an Ar atmosphere, neutron-irradiated float-zone H-doped material which had been kept for 3 years at room temperature and fast-neutron irradiated float-zone H-doped material, revealed that the shallow donors were directly related to H and to defects; especially thermal-neutron radiation point defects. The maximum concentration of shallow donors approached a stable value with increasing neutron fluence.

Hydrogen-Defect Shallow Donors in Si. X.T.Meng, A.G.Kang, S.R.Bai: Japanese Journal of Applied Physics - 1, 2001, 40[4A], 2123-6