The dynamic behavior of dislocations, in highly B-doped crystals having concentrations of up to 2.5 x 1020/cm3, was investigated by using the etch-pit technique. Suppression of dislocation generation from a surface scratch was found in B-doped material, and the critical stress for dislocation generation increased with B concentration. This was explained in terms of dislocation locking due to impurity segregation. The critical stress of 60º dislocations in B-doped crystals at 800C was shown to increase with increasing B concentration (figure 8).

Dynamic Characteristics of Dislocations in Highly Boron-Doped Silicon. I.Yonenaga, T.Taishi, X.Huang, K.Hoshikawa: Journal of Applied Physics, 2001, 89[10], 5788-90

Figure 8

Critical Stress for 60º Dislocations in B-Doped Si at 800C