Dislocation-free crystals, which were B- or P-doped, were grown by using the Czochralski method; without Dash necking. The limiting B concentration for a 7mm x 7mm seed to be without dislocations, due to thermal shock, was equal to 1018/cm3 for normal Czochralski crystal growth. The maximum admissible discrepancy in B concentration between seed and crystal was equal to 7 x 1018/cm3, for it to be without dislocations due to lattice misfit in the grown crystal. Seeds with a B concentration of 3 x 1018/cm3 were used to grow Czochralski crystals from lightly B-doped (p-type) or P-doped (n-type) melts. This yielded dislocation-free crystals without the need for Dash necking. Heavily B-doped seeds were expected to be useful for growing other lightly doped dislocation-free Czochralski-Si crystals without the need for Dash necking.

Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking. X.Huang, T.Taishi, I.Yonenaga, K.Hoshikawa: Japanese Journal of Applied Physics - 1, 2001, 40[1], 12-7