The pinning effect of punched-out dislocations in C-, N- or B-doped Czochralski-type wafers was investigated by using an indentation method. The size of rosette patterns, which corresponded to the distance of dislocation movement, was measured after heat-treatment in the absence of thermal stress. It was found that the rosette size was decreased by C, N or B doping to concentrations of 2 x 1016 to 1.4 x 1017, 5.3 x 1013 to 5.3 x 1014 and 2 x 1018 to 2 x 1019/cm3, respectively. The rosette size was a power-law function of the concentration, with exponents of -1/3 for C, -1/10 for N and -1/10 for B.

Pinning Effect of Punched-Out Dislocations in Carbon-, Nitrogen- or Boron-Doped Silicon Wafers. M.Akatsuka, K.Sueoka: Japanese Journal of Applied Physics - 1, 2001, 40[3A], 1240-1