It was noted that published reports suggested that over-coordinated O or self-interstitials constituted, directly or indirectly, a chemical bridge between thermal donors, O precipitates and dislocations. This could supply a common origin for emission features in the 0.7 to 0.9eV range. It was shown here that not only could photoluminescence emissions from oxide precipitates be related to their density and to the presence of closed dislocation rings around them, but also that the precursors of dislocations were also optically active. In the case of samples which were annealed within the range of thermal donors, it was shown that their optical activity appeared to be related to a transition from the shallow donor level of thermal donors to the deep level of a CiO2 complex.

The Photoluminescence Emission in the 0.7-0.9eV Range from Oxygen Precipitates, Thermal Donors and Dislocations in Silicon. S.Pizzini, M.Guzzi, E.Grilli, G.Borionetti: Journal of Physics - Condensed Matter, 2000, 12[49], 10131-43