It was recalled that dislocations in semiconductors could be markedly affected by H plasma. Thus, core states could be passivated and the mobility changed. In the present case, the activation barrier to dislocation motion fell by 1eV upon exposure to H plasma (470-540C, 1h).

Theory of Dislocations in Diamond and Silicon and their Interaction with Hydrogen. M.I.Heggie, S.Jenkins, C.P.Ewels, P.Jemmer, R.Jones, P.R.Briddon: Journal of Physics - Condensed Matter, 2000, 12[49], 10263-70