The motion of dislocations in originally dislocation-free Czochralski-type wafers which were heat-treated at 450 or 650C was investigated. It was found that low-temperature treatment of wafers with an O content of 7 x 1017 to 8 x 1017/cm3 substantially affected the dynamic properties of dislocations which were generated during 4-point bending, and led to an increase in the starting stress for the onset of dislocation motion. A characteristic spatial inhomogeneity was observed in the generation and propagation of dislocations from indentations.

Dynamic Properties of Dislocations in Silicon Wafers Heat-Treated at Low Temperatures. M.V.Mezhennyi, M.G.Milvidskii, V.F.Pavlov, V.Y.Reznik: Fizika Tverdogo Tela, 2001, 43[1], 47-50 (Physics of the Solid State, 2001, 43[1], 47-50)