The effect of dislocation anharmonicity upon the Young’s modulus, in bending, of single crystals was studied. It was shown that changes in the Young’s modulus were caused by the contribution which dislocations made to the fourth-order elasticity moduli. It was shown experimentally that the bending deformation in both donor and acceptor crystals favoured the appearance of mainly edge dislocations with axes that formed an angle of about 90° with respect to the Burgers vector.

The Dislocation Anharmonicity in Silicon. A.A.Skvortsov, A.M.Orlov, K.E.Nikitin, O.V.Litvinenko: Technical Physics Letters, 2000, 26[11], 974-6